The plasma modification system, utilising ZEPTOOLS’ own three-temperature tube furnace, has epitaxially grown large-size, high-quality single-layer molybdenum disulfide films on sapphire substrates by oxygen-assisted chemical vapour deposition technology. The introduction of oxygen during the growth process not only effectively prevents the poisoning of the molybdenum trioxide source and reduces the nucleation density, but also reduces the sulfur vacancy density, thus realising the growth of a large-sized single crystal monolayer molybdenum disulfide.
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Plasma Modification Systems
The plasma modification system, utilising ZEPTOOLS’ own three-temperature tube furnace, has epitaxially grown large-size, high-quality single-layer molybdenum disulfide films on sapphire substrates by oxygen-assisted chemical vapour deposition technology. The introduction of oxygen during the growth process not only effectively prevents the poisoning of the molybdenum trioxide source and reduces the nucleation density, but also reduces the sulfur vacancy density, thus realising the growth of a large-sized single crystal monolayer molybdenum disulfide.
Using the plasma modification system, epitaxial growth of a two-inch wafer-level high-quality monolayer molybdenum disulfide has been realised under self-limiting growth conditions (100% coverage, uniform film formation), and zero contamination of wafer-level films and substrate lossless transfer have been achieved through improved transfer equipment. The monolayer molybdenum disulfide film uniformly covers the entire sapphire substrate, with no gaps or overlapping layers. The film consists of 1-micron grains spliced together with a relative orientation of 60 º. The resulting film contains only 60 º grains. The resulting film contains only 60 º grain boundaries.
